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PD - 96139
IRFH7923PBF
Applications
l
HEXFET(R) Power MOSFET
l
High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications
VDSS 30V
RDS(on) max Qg 8.7m:@VGS = 10V 8.7nC
Benefits
l l l l l l l l
Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering
D D D D
S S S G
PQFN
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 20 15 12 33 120 3.0
Units
V
g Power Dissipation g
Power Dissipation
c
A W W/C C
Linear Derating Factor Operating Junction and
g
1.9 0.02 -55 to + 150
Storage Temperature Range
Thermal Resistance
Parameter
RJC RJA Junction-to-Case
f
Typ.
--- ---
Max.
8.3 42
Units
C/W
Junction-to-Ambient
g
Notes through are on page 9
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3/3/08
1
IRFH7923PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 29 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.024 6.8 9.3 1.8 -5.8 --- --- --- --- --- 8.7 1.8 1.1 2.7 3.1 3.8 4.9 2.0 7.1 8.7 8.6 4.9 1095 235 110 --- --- 8.7 V
Conditions
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 15A m VGS = 4.5V, ID = 12A 11.9 2.35 V VDS = VGS, ID = 25A --- mV/C 1.0 VDS = 24V, VGS = 0V A VDS = 24V, VGS = 0V, TJ = 125C 150 100 VGS = 20V nA -100 VGS = -20V --- S VDS = 15V, ID = 12A
e e
13 --- --- --- --- --- --- 3.0 --- --- --- --- --- --- --- Typ. --- --- nC ns nC
VDS = 15V VGS = 4.5V ID = 12A See Fig.17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 12A RG=1.8 See Fig.15 VGS = 0V VDS = 15V = 1.0MHz Max. 26 12 Units mJ A
pF
Avalanche Characteristics
EAS IAR
d
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 12 11 3.7 A 120 1.0 18 17 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V TJ = 25C, IF = 12A, VDD = 15V di/dt = 300A/s
e
eA
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFH7923PBF
1000
TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
1000
TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
ID, Drain-to-Source Current (A)
100
10
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10 2.3V 1
1 2.3V
0.1
60s PULSE WIDTH
0.01 0.1 1 Tj = 25C 10
0.1
60s PULSE WIDTH
Tj = 150C 0.1 1
100
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = 15A VGS = 10V
ID, Drain-to-Source Current (A)
100
1.5
10
T J = 150C
T J = 25C 1 VDS = 15V 60s PULSE WIDTH 0.1 1 2 3 4 5 6
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFH7923PBF
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
14.0 ID= 12A
VGS, Gate-to-Source Voltage (V)
12.0 10.0 8.0 6.0 4.0 2.0 0.0
C, Capacitance (pF)
1000
Ciss Coss
VDS= 24V VDS= 15V
100
Crss
10 1 10 VDS, Drain-to-Source Voltage (V) 100
0
5
10
15
20
25
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100sec 1msec
ISD, Reverse Drain Current (A)
100 T J = 150C 10
ID, Drain-to-Source Current (A)
100
10
1.00
T J = 25C
1
10msec
T A = 25C
VGS = 0V 0.10 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
0.1 0
Tj = 150C Single Pulse 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFH7923PBF
16
VGS(th) , Gate Threshold Voltage (V)
2.2 2.0 1.8 1.6 1.4 1.2 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) ID = 25A
14 12 10 8 6 4 2 0 25 50 75 100 125 150 T J , Junction Temperature (C)
ID, Drain Current (A)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
Thermal Response ( Z thJA ) C/W
D = 0.50 10 0.20 0.10 0.05 0.02 0.01
R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 R5 R5
1
Ri (C/W)
2.295027 a 7.222539 10.88056 11.60807 9.99673
J
0.1
1
2
3
4
4
5
5
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i Ri
0.000402 0.013524 0.33841 4.926 63.0
i (sec)
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.1 1 10 100
0.001 1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFH7923PBF
RDS(on), Drain-to -Source On Resistance (m )
25
EAS , Single Pulse Avalanche Energy (mJ)
120 ID = 15A 100 80 60 40 20 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting T J , Junction Temperature (C) ID 2.32A 3.30A BOTTOM 12.0A TOP
20
15
10
T J = 125C T J = 25C
5
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
V DS V GS
RD
VDS
L
DRIVER
RG V10V GS Pulse Width 1 s Duty Factor 0.1
D.U.T.
+
-V DD
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS tp
Fig 15a. Switching Time Test Circuit
90%
VDS
10%
VGS
I AS
td(on)
tr
td(off)
tf
Fig 14b. Unclamped Inductive Waveforms
Fig 15b. Switching Time Waveforms
6
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IRFH7923PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Current Regulator Same Type as D.U.T.
Vds Vgs
Id
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Qgs1 Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 17. Gate Charge Test Circuit
Fig 18. Gate Charge Waveform
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IRFH7923PBF
PQFN Package Details
PQFN Part Marking
INTERNATIONAL RECTIFIER LOGO 6
DATE CODE
ASSEMBLY SITE CODE (Per SCOP 200-002)
XXXX XYWWX XXXXX
PART NUMBER MARKING CODE
(Per Marking Spec.)
PIN 1 IDENTIFIER LOT CODE
(Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
8
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IRFH7923PBF
PQFN Tape and Reel
NOTES: (I) Measured from the centerline of the sprocket hole to the centerline of the pocket (II) Cumulative tolerance of 10 sprocket holes is +/- 0.20 (III) Measured from the centerline of the sprocket hole to the centerline of the pocket (IV) Other material available (V) Forming format: Flatbed (VI) Estimated maximum length = 93 meters / 22B3 reel
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.37mH, RG = 25, IAS = 12A. Pulse width 400s; duty cycle 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/2008
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9

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